BAW100 BAW100g surface mount dual, isolated high speed silicon switching diodes description: the central semiconductor BAW100 and BAW100g each consist of two electrically isolated high speed silicon switching diodes packaged in an epoxy molded sot-143 surface mount case. this device is designed for high speed switching applications. marking codes: BAW100: cjss BAW100g: cjsg ? the BAW100g is halogen free by design. maximum ratings: (t a =25c) symbol units continuous reverse voltage v r 75 v peak repetitive reverse voltage v rrm 85 v continuous forward current i f 250 ma peak repetitive forward current i frm 500 ma peak forward surge current, tp=1.0ms i fsm 4.0 a peak forward surge current, tp=1.0ms i fsm 2.0 a peak forward surge current, tp=1.0s i fsm 1.0 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25c unless otherwise noted) symbol test conditions min max units i r v r =25v, t a =150c 30 a i r v r =75v 1.0 a i r v r =75v, t a =150c 50 a bv r i r =100a 85 v v f i f =1.0ma 715 mv v f i f =10ma 855 mv v f i f =50ma 1.00 v v f i f =150ma 1.25 v c t v r =0, f=1.0mhz 2.0 pf t rr i f =i r =10ma, r l =100, rec. to 1.0ma 6.0 ns sot-143 case r4 (20-november 2009) www.centralsemi.com
BAW100 BAW100g surface mount dual, isolated high speed silicon switching diodes sot-143 case - mechanical outline lead code: 1) anode d1 2) anode d2 3) cathode d2 4) cathode d1 marking codes: BAW100: cjss BAW100g: cjsg pin configuration www.centralsemi.com r4 (20-november 2009)
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